Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates

K. Mukherjee, D. A. Beaton, T. Christian, E. J. Jones, K. Alberi, A. Mascarenhas, M. T. Bulsara, E. A. Fitzgerald
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4804264