Erratum: “X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth” [J. Appl. Phys. 110, 113502 (2011)]

Takuo Sasaki, Hidetoshi Suzuki, Masamitu Takahasi, Yoshio Ohshita, Itaru Kamiya, Masafumi Yamaguchi
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4804236