Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

  • Mee-Yi Ryu, Tom R. Harris, Y. K. Yeo, R. T. Beeler, J. Kouvetakis
  • Applied Physics Letters, April 2013, American Institute of Physics
  • DOI: 10.1063/1.4803927

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