Cp of amorphous Si: experimental values from 0 to 900 K
What is it about?
Knowledge of Cp is useful for predicting the material's temperature when it receives a sudden input of energy as in the crystallization of thin films with a laser pulse or when heat is dissipated during operation of an electronic device. This information lacked for a-Si. It is shown that, contrarily to crystalline materials, Cp of a-Si depends critically on its hydrogen contents.
Why is it important?
The first experimental determination of Cp of relaxed a-Si.
The following have contributed to this page: Pere Roura