Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1° offcut substrate using dichlorosilane as Si precursor

Sabih U. Omar, M. V. S. Chandrashekhar, Iftekhar A. Chowdhury, Tawhid A. Rana, Tangali S. Sudarshan
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4803881
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