Delayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer

C. S. An, Y. D. Jang, H. Lee, D. Lee, J. D. Song, W. J. Choi
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4803493