Heteroepitaxy of GaAs on (001) ⇒ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy

K. L. Schulte, A. W. Wood, R. C. Reedy, A. J. Ptak, N. T. Meyer, S. E. Babcock, T. F. Kuech
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4803037
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