A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor

Seyed Mohammad Tabatabaei, Maziar Noei, Kaveh Khaliji, Mahdi Pourfath, Morteza Fathipour
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4803032
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