Quantification of trap state densities in GaAs heterostructures grown at varying rates using intensity-dependent time resolved photoluminescence

C. R. Haughn, K. J. Schmieder, J. M. O. Zide, A. Barnett, C. Ebert, R. Opila, M. F. Doty
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4802841
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