Studies of photoconductivity and field effect transistor behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires in vacuum and air

P. T. Blanchard, K. Soria, B. Klein, B. S. Eller, K. A. Bertness, J. B. Schlager, A. W. Sanders, N. A. Sanford, L. H. Robins
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4802689
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