Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors

Kai Zhang, JunShuai Xue, MengYi Cao, LiYuan Yang, YongHe Chen, JinCheng Zhang, XiaoHua Ma, Yue Hao
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4802431