Strong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples

Yu. I. Mazur, V. G. Dorogan, M. Schmidbauer, G. G. Tarasov, S. R. Johnson, X. Lu, M. E. Ware, S.-Q. Yu, T. Tiedje, G. J. Salamo
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4801429