Lattice strain of hydrogen-implanted silicon: Correlation between X-ray scattering analysis and ab-initio simulations

F. Rieutord, F. Mazen, S. Reboh, J. D. Penot, L. Bilteanu, J. P. Crocombette, V. Vales, V. Holy, L. Capello
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4800538
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