Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces

  • D. M. Zhernokletov, H. Dong, B. Brennan, M. Yakimov, V. Tokranov, S. Oktyabrsky, J. Kim, R. M. Wallace
  • Applied Physics Letters, April 2013, American Institute of Physics
  • DOI: 10.1063/1.4800441

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http://dx.doi.org/10.1063/1.4800441

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