Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces

  • D. M. Zhernokletov, H. Dong, B. Brennan, M. Yakimov, V. Tokranov, S. Oktyabrsky, J. Kim, R. M. Wallace
  • Applied Physics Letters, April 2013, American Institute of Physics
  • DOI: 10.1063/1.4800441

The authors haven't yet claimed this publication.

Read Publication

In partnership with: