Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices

Kai-Huang Chen, Rui Zhang, Ting-Chang Chang, Tsung-Ming Tsai, Kuan-Chang Chang, J. C. Lou, Tai-Fa Young, Jung-Hui Chen, Chih-Cheng Shih, Cheng-Wei Tung, Yong-En Syu, Simon M. Sze
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4799655