Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

A. Ohata, N. Rodriguez, C. Navarro, L. Donetti, F. Gamiz, F. C. Fenouillet-Beranger, S. Cristoloveanu
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4799612