Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

T. Mehrtens, M. Schowalter, D. Tytko, P. Choi, D. Raabe, L. Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, A. Rosenauer
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4799382
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