Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

M. K. Hudait, Y. Zhu, D. Maurya, S. Priya, P. K. Patra, A. W. K. Ma, A. Aphale, I. Macwan
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4799367