Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

N. R. Pradhan, D. Rhodes, Q. Zhang, S. Talapatra, M. Terrones, P. M. Ajayan, L. Balicas
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4799172