Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap

M. Latkowska, R. Kudrawiec, F. Janiak, M. Motyka, J. Misiewicz, Q. Zhuang, A. Krier, W. Walukiewicz
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4798590
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