Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap

  • M. Latkowska, R. Kudrawiec, F. Janiak, M. Motyka, J. Misiewicz, Q. Zhuang, A. Krier, W. Walukiewicz
  • Applied Physics Letters, March 2013, American Institute of Physics
  • DOI: 10.1063/1.4798590

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