Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

P. M. Mooney, K. P. Watkins, Zenan Jiang, A. F. Basile, R. B. Lewis, V. Bahrami-Yekta, M. Masnadi-Shirazi, D. A. Beaton, T. Tiedje
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4798237