Rate limiting step for the switching kinetics in Cu doped Ge0.3Se0.7 based memory devices with symmetrical and asymmetrical electrodes

R. Soni, P. Meuffels, A. Petraru, O. Vavra, H. Kohlstedt
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4797488