A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

W. Mtangi, M. Schmidt, F. D. Auret, W. E. Meyer, P. J. Janse van Rensburg, M. Diale, J. M. Nel, A. G. M. Das, F. C. C. Ling, A. Chawanda
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4796139
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