Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (2021) substrates

M. Sawicka, C. Chèze, H. Turski, G. Muziol, S. Grzanka, C. Hauswald, O. Brandt, M. Siekacz, R. Kucharski, T. Remmele, M. Albrecht, M. Krysko, E. Grzanka, T. Sochacki, C. Skierbiszewski
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4796123
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