Carrier localization and in-situ annealing effect on quaternary Ga1−xInxAsySb1−y/GaAs quantum wells grown by Sb pre-deposition

  • Jiri Thoma, Baolai Liang, Liam Lewis, Stephen P. Hegarty, Guillaume Huyet, Diana L. Huffaker
  • Applied Physics Letters, March 2013, American Institute of Physics
  • DOI: 10.1063/1.4795866

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http://dx.doi.org/10.1063/1.4795866

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