Point defects introduced by InN alloying into InxGa1−xN probed using a monoenergetic positron beam

A. Uedono, T. Tsutsui, T. Watanabe, S. Kimura, Y. Zhang, M. Lozac'h, L. W. Sang, S. Ishibashi, M. Sumiya
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4795815