Electric-double-layer transistors with thin crystals of FeSe1−xTex (x = 0.9 and 1.0)

  • R. Eguchi, M. Senda, E. Uesugi, H. Goto, T. Kambe, T. Noji, Y. Koike, A. Fujiwara, Y. Kubozono
  • Applied Physics Letters, March 2013, American Institute of Physics
  • DOI: 10.1063/1.4795626

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http://dx.doi.org/10.1063/1.4795626

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