Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique

S. Pud, J. Li, M. Petrychuk, S. Feste, S. Vitusevich, B. Danilchenko, A. Offenhäusser, S. Mantl
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4795603