Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

E. N. Sgourou, D. Timerkaeva, C. A. Londos, D. Aliprantis, A. Chroneos, D. Caliste, P. Pochet
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4795510
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