Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors

  • Mengwei Si, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon, Peide D. Ye
  • Applied Physics Letters, March 2013, American Institute of Physics
  • DOI: 10.1063/1.4794846

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http://dx.doi.org/10.1063/1.4794846

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