Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

  • A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J. C. Moreno, S. Rennesson, Y. Cordier
  • Applied Physics Letters, March 2013, American Institute of Physics
  • DOI: 10.1063/1.4794411

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http://dx.doi.org/10.1063/1.4794411

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