Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

A. Fontserè, A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, J. C. Moreno, S. Rennesson, Y. Cordier
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4794411