Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy

A. Mogilatenko, S. Hagedorn, E. Richter, U. Zeimer, D. Goran, M. Weyers, G. Tränkle
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4794098
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