Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer

K. Jarašiūnas, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, M. Vengris, S. Okur, H. Morkoç, Ü. Özgür, C. Giesen, Ö. Tuna, M. Heuken
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4793637