Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal–oxide–semiconductor field effect transistor structure (invited)

K. Hamaya, Y. Ando, K. Masaki, Y. Maeda, Y. Fujita, S. Yamada, K. Sawano, M. Miyao
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4793501