Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition

V. Palenskis, J. Matukas, S. Pralgauskaitė, D. Seliuta, I. Kašalynas, L. Subačius, G. Valušis, S. P. Khanna, E. H. Linfield
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4792741
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