Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

F. C.-P. Massabuau, L. Trinh-Xuan, D. Lodié, E. J. Thrush, D. Zhu, F. Oehler, T. Zhu, M. J. Kappers, C. J. Humphreys, R. A. Oliver
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4792505
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