Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

  • V. Y.-Q. Zhuo, Y. Jiang, M. H. Li, E. K. Chua, Z. Zhang, J. S. Pan, R. Zhao, L. P. Shi, T. C. Chong, J. Robertson
  • Applied Physics Letters, February 2013, American Institute of Physics
  • DOI: 10.1063/1.4792274

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