Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 × 2 transfer-matrix algebra

C. C. Katsidis, A. O. Ajagunna, A. Georgakilas
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4792259