Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements

  • P. Kordoš, R. Stoklas, D. Gregušová, K. Hušeková, J.-F. Carlin, N. Grandjean
  • Applied Physics Letters, February 2013, American Institute of Physics
  • DOI: 10.1063/1.4792060

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http://dx.doi.org/10.1063/1.4792060

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