Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements

P. Kordoš, R. Stoklas, D. Gregušová, K. Hušeková, J.-F. Carlin, N. Grandjean
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4792060