Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices

Y. S. Lin, F. Zeng, S. G. Tang, H. Y. Liu, C. Chen, S. Gao, Y. G. Wang, F. Pan
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4791695