Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors

Joshua A. Taillon, Joon Hyuk Yang, Claude A. Ahyi, John Rozen, John R. Williams, Leonard C. Feldman, Tsvetanka S. Zheleva, Aivars J. Lelis, Lourdes G. Salamanca-Riba
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4789924