The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers

N. Hossain, K. Hild, S. R. Jin, S.-Q. Yu, S. R. Johnson, D. Ding, Y.-H. Zhang, S. J. Sweeney
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4789859