Chemical effect of Si+ ions on the implantation-induced defects in ZnO studied by a slow positron beam

M. Jiang, D. D. Wang, Z. Q. Chen, S. Kimura, Y. Yamashita, A. Mori, A. Uedono
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4789010
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