Influence of phonons on the temperature dependence of the band gap of AlN and AlxGa1−xN alloys with high AlN mole fraction

S. Sohal, W. Feng, M. Pandikunta, V. V. Kuryatkov, S. A. Nikishin, M. Holtz
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4784170