Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

  • Varistha Chobpattana, Junwoo Son, Jeremy J. M. Law, Roman Engel-Herbert, Cheng-Ying Huang, Susanne Stemmer
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4776656

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http://dx.doi.org/10.1063/1.4776656

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