Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

Y. Zhu, N. Jain, D. K. Mohata, S. Datta, D. Lubyshev, J. M. Fastenau, A. K. Liu, M. K. Hudait
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4775606