Effects of lateral overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r-sapphire substrates

Moon-Taek Hong, Tae-Soo Kim, Ki-Nam Park, Sukkoo Jung, Younghak Chang, Gyu-Hyun Bang, Hyung-Gu Kim, Jina Jeon, Yoon-Ho Choi, Sung-Min Hwang, Jung-Hoon Song
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4774302
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