Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

H. F. Liu, S. B. Dolmanan, L. Zhang, S. J. Chua, D. Z. Chi, M. Heuken, S. Tripathy
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4774288
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The following have contributed to this page: Sudhiranjan Tripathy