Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry

K. Xu, H. Sio, O. A. Kirillov, L. Dong, M. Xu, P. D. Ye, D. Gundlach, N. V. Nguyen
  • Journal of Applied Physics, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4774038
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