Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

Szu-Han Ho, Ting-Chang Chang, Bin-Wei Wang, Ying-Shin Lu, Wen-Hung Lo, Ching-En Chen, Jyun-Yu Tsai, Hua-Mao Chen, Guan-Ru Liu, Tseung-Yuen Tseng, Osbert Cheng, Cheng-Tung Huang, Xi-Xin Cao
  • Applied Physics Letters, January 2013, American Institute of Physics
  • DOI: 10.1063/1.4773914
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